SweGaN manufactures group III/N epitaxial layers on SiC, GaN, and AlN substrates. SweGaN was founded in 2014 as a spin-off from Linköping University.
SweGaN is located in Mjärdevi science park and has 10 employees at present. The core business is epitaxial growth of high quality GaN and SiC substrates.
SweGaN’s role is to develop a cost-efficient, high voltage GaN-on-SiC power device based on our novel QuanFINETM structure.
The main contribution will be to deliver QuanFINE material into the project for further processing by Rise. We will also develop cost efficient methods to produce SiC substrates.