Objectives

Copyright by Infineon Technologies Austria

Objective 1:

Research on vertical power GaN processes and devices pushing performance beyond current state-of-the-art

copyright by Infineon Technologies Austria

Objective 2:

Research on lateral GaN technologies and devices to achieve best in class power density and efficiency while optimizing cost vs. performance

copyright by Infineon Technologies Austria

Objective 3:

Bringing GaN on Silicon RF performance close to GaN on Silicon Carbide thus enabling an affordable 5G rollout

Objective 4:

Braking the packaging limits – size, electrical and thermal constraints – for high performance GaN power products

 

copyright by Infineon Technologies Austria

Objective 5:

Close the reliability and defect density gap for most innovative GaN devices

 

copyright by Infineon Technologies Austria

Objective 6:

Demonstrate European leadership in high performance power electronics and RF application domains