Scientific Publications

2019

EPFL - High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

M. Zhu, J. Ma, L. Nela, C. Erine and E. Matioli, "High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance," in IEEE Electron Device Letters, vol. 40, no. 8, pp. 1289-1292, Aug. 2019.
doi: 10.1109/LED.2019.2922204

https://infoscience.epfl.ch/record/271888?ln=en

Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

Fahle, D., Zhao, M., Geens, K., Li, X., Wellekens, D., Magnani, A., ... & Heuken, M. (2019). Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V.

https://tu-dresden.de/ing/elektrotechnik/ihm/NEM/dgkk19

High-performance normally-off tri-gate GaN power MOSFETs

Zhu, M., Ma, J., Nela, L., & Matioli, E. (2019, May). High-performance normally-off tri-gate GaN power MOSFETs. In 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 71-74). IEEE.

https://infoscience.epfl.ch/record/268281/files/PID5832811.pdf

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Ma, J., Erine, C., Zhu, M., Luca, N., Xiang, P., Cheng, K., & Matioli, E. (2019, December). 1200 V multi-channel power devices with 2.8 Ω• mm ON-resistance. In 2019 IEEE International Electron Devices Meeting (IEDM) (pp. 4-1). IEEE.

https://infoscience.epfl.ch/record/276212/files/IEDM_infoscience.pdf

2020

Modeling of gate capacitance of GaN-based trench-gate vertical metaloxide- semiconductor devices

Borga, M., Mukherjee, K., De Santi, C., Stoffels, S., Geens, K., You, S., ... & Meneghini, M. (2020). Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. Applied Physics Express, 13(2), 024006.

https://iopscience.iop.org/article/10.35848/1882-0786/ab6ef8

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Mukherjee, K., Borga, M., Ruzzarin, M., De Santi, C., Stoffels, S., You, S., ... & Zanoni, E. (2020). Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs. Applied Physics Express, 13(2), 024004.

https://iopscience.iop.org/article/10.35848/1882-0786/ab6ddd/pdf

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, and Stefaan Decoutere (2020). Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS).

 

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.

Mukherjee, Kalparupa, et al. "Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability." Materials 13.21 (2020): 4740.

https://www.mdpi.com/1996-1944/13/21/4740

Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices

Bakeroot, B., Geens, K., Borga, M., Liang, H., You, S., & Decoutere, S. (2020, October). Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices. In 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (pp. 1-4). IEEE.

https://ieeexplore.ieee.org/abstract/document/9393871

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

Li, X., Geens, K., Wellekens, D., Zhao, M., Magnani, A., Amirifar, N., ... & Decoutere, S. (2020). Integration of 650 V GaN power ICs on 200 mm engineered substrates. IEEE Transactions on Semiconductor Manufacturing, 33(4), 534-538.

https://ieeexplore.ieee.org/abstract/document/9170524

Exploration of gate trench module for vertical GaN devices

Ruzzarin, M., Geens, K., Borga, M., Liang, H., You, S., Bakeroot, B., ... & Zanoni, E. (2020). Exploration of gate trench module for vertical GaN devices. Microelectronics Reliability, 114, 113828.

https://arxiv.org/abs/2104.00939

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

Zhu, M., Ma, J., & Matioli, E. (2020, September). Investigation of p-GaN tri-gate normally-off GaN power MOSHEMTs. In 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 345-348). IEEE.

https://infoscience.epfl.ch/record/280251/files/M.Zhu%2C%20J.%20Ma%2C%20and%20E.%20Matioli%20ISPSD%20-%202020_Vienna_final.pdf

2021

Multi-channel nanowire devices for efficient power conversion.

Nela, L., et al. "Multi-channel nanowire devices for efficient power conversion." Nature Electronics 4.4 (2021): 284-290.

https://www.nature.com/articles/s41928-021-00550-8https://infoscience.epfl.ch/record/268281/files/PID5832811.pdf

 

Vertical GaN devices: Process and reliability

You, Shuzhen, et al. "Vertical GaN devices: Process and reliability." Microelectronics Reliability (2021): 114218.

https://www.sciencedirect.com/science/article/pii/S0026271421001840

 

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.

Mukherjee, Kalparupa, et al. "Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization." Materials 14.9 (2021): 2316

https://www.mdpi.com/1996-1944/14/9/2316

 

Comparison of the parasitic Impedances from the Drain-Source Path of Power Transistor Packages at up to 2 GHz

Moldaschl, T., Woetzel, S., Latella, R., Galvano, M., & Binder, A. (2022). Comparison of the parasitic impedances from the drain‐source path of power transistor packages at up to 2 GHz. Engineering Reports, 4(5), e12489.

https://onlinelibrary.wiley.com/doi/full/10.1002/eng2.12489

 

Multiphysics Reduced Order Modelling of a Packaged Laser Diode

Grosso, G., Moldaschl, T., Fuger, R., & Binder, A. (2021, September). Multiphysics Reduced Order Modelling of a Packaged Laser Diode. In 2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) (pp. 1-6). IEEE.

https://ieeexplore.ieee.org/abstract/document/9626505

 

A reconfigurable dual-mode Filter in Embedded Suspended Stripline Substrate Technology (ESSS)

Alterkawi, A. B. A., Sattler, S. W., Teschl, R., & Bösch, W. (2021, November). A reconfigurable dual-mode Filter in Embedded Suspended Stripline Substrate Technology (ESSS). In 2021 IEEE MTT-S International Microwave Filter Workshop (IMFW) (pp. 306-308). IEEE.

https://ieeexplore.ieee.org/abstract/document/9642296

 

Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

Geens, K., Hahn, H., Liang, H., Borga, M., Cingu, D., You, S., ... & Decoutere, S. (2021). Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication. Gen, 1000, 2.

https://csmantech.org/wp-content/acfrcwduploads/field_5e8cddf5ddd10/post_7706/8.1.2021_CS_MANTECH_2021_Final_V2.pdf

 

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications

Fabris, E., Borga, M., Posthuma, N., Zhao, M., De Jaeger, B., You, S., ... & Zanoni, E. (2021, March). Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. In 2021 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-8). IEEE.

https://ieeexplore.ieee.org/abstract/document/9405097

 

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si (111) interface in GaN-based HEMT buffer stacks

Mauder, C., Hahn, H., Marx, M., Gao, Z., Oligschlaeger, R., Zweipfennig, T., ... & Heuken, M. (2021). Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si (111) interface in GaN-based HEMT buffer stacks. Semiconductor Science and Technology, 36(7), 075008.

https://iopscience.iop.org/article/10.1088/1361-6641/ac02da/meta

 

Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations

Yoo, S. H., Lymperakis, L., & Neugebauer, J. (2021). Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations. Physical Review Materials, 5(4), 044605.

https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.5.044605

 

Finite-size correction for slab supercell calculations of materials with spontaneous polarization

Yoo, S. H., Todorova, M., Wickramaratne, D., Weston, L., Walle, C. G., & Neugebauer, J. (2021). Finite-size correction for slab supercell calculations of materials with spontaneous polarization. npj Computational Materials, 7(1), 1-9.

https://www.nature.com/articles/s41524-021-00529-1

 

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Koller, C., Lymperakis, L., Pogany, D., Pobegen, G., & Ostermaier, C. (2021). Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination. Journal of Applied Physics, 130(18), 185702.

https://aip.scitation.org/doi/abs/10.1063/5.0060912

 

Performance evaluation of an IPT system based on GaN devices operating in capacitive, resistive or inductive regions

Avila, A., Garcia-Bediaga, A., Gonzalez-Hernando, F., Alzuguren, I., & Rujas, A. (2021, October). Performance evaluation of an IPT system based on GaN devices operating in capacitive, resistive or inductive regions. In 2021 IEEE Vehicle Power and Propulsion Conference (VPPC) (pp. 1-6). IEEE.

https://ieeexplore.ieee.org/abstract/document/9699190

 

An Ultra-Low Weight Bidirectional Back-End PFC Topology

Sanchez, A., Garcia-Bediaga, A., Alzuguren, I., Zubitur, I., & Rujas, A. (2021, October). An Ultra-Low Weight Bidirectional Back-End PFC Topology. In 2021 IEEE Energy Conversion Congress and Exposition (ECCE) (pp. 1224-1229). IEEE.

https://ieeexplore.ieee.org/abstract/document/9595169

 

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Nela, L., Erine, C., Ma, J., Yildirim, H. K., Van Erp, R., Xiang, P., ... & Matioli, E. (2021, May). High-performance enhancement-mode AlGaN/GaN multi-channel power transistors. In 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 143-146). IEEE.

https://ieeexplore.ieee.org/abstract/document/9452238

 

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Nela, L., Van Erp, R., Perera, N., Jafari, A., Erine, C., & Matioli, E. (2021). Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors. IEEE Electron Device Letters, 42(11), 1642-1645.

https://ieeexplore.ieee.org/abstract/document/9541167

 

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Wang, T., Nikoo, M. S., Nela, L., & Matioli, E. (2021, May). LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors. In 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 135-138). IEEE.

https://ieeexplore.ieee.org/abstract/document/9452252

 

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Nela, L., Yildirim, H. K., Erine, C., Van Erp, R., Xiang, P., Cheng, K., & Matioli, E. (2020). Conformal passivation of multi-channel GaN power transistors for reduced current collapse. IEEE Electron Device Letters, 42(1), 86-89.

https://ieeexplore.ieee.org/abstract/document/9261603

 

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Zhu, M., Erine, C., Ma, J., Nikoo, M. S., Nela, L., Sohi, P., & Matioli, E. (2020). P-GaN tri-gate MOS structure for normally-off GaN power transistors. IEEE Electron Device Letters, 42(1), 82-85.

https://ieeexplore.ieee.org/abstract/document/9253678

 

Study of semi-vertical GaN-on-Si FETs by DLTFS with optical excitation

DROBNÝ, Jakub - MATUŠ, Matej - MAREK, Juraj - CHVÁLA, Aleš - GEENS, Karen - BORGA, Matteo - LIANG, Hu - YOU, Shuzhen - DECOUTERE, Stefaan - STUCHLÍKOVÁ, Ľubica,"Study of semi-vertical GaN-on-Si FETs by DLTFS with optical excitation,"  ADEPT 2021 : 9th International conference on advances in electronic and photonic technologies

 

Degradation of 600V GaN HEMTs under repetitive short circuit conditions.

Kozárik, J., Marek, J., Minárik, M., Chvála, A., Černaj, L., Donoval, M., & Donoval, D. (2020, October). Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions. In 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (pp. 127-130). IEEE.

https://ieeexplore.ieee.org/abstract/document/9393866

 

GaN-based power devices: Physics, reliability, and perspectives

Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., ... & Matioli, E. (2021). GaN-based power devices: Physics, reliability, and perspectives. Journal of Applied Physics, 130(18), 181101.

https://aip.scitation.org/doi/full/10.1063/5.0061354

 

Charge Trapping in GaN Power Transistors: Challenges and Perspectives

Meneghini, M., Modolo, N., Nardo, A., De Santi, C., Minetto, A., Sayadi, L., ... & Zanoni, E. (2021, December). Charge Trapping in GaN Power Transistors: Challenges and Perspectives. In 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (pp. 1-4). IEEE.

https://ieeexplore.ieee.org/abstract/document/9682455

 

Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

Nardo, A., De Santi, C., Koller, C., Ostermaier, C., Daumiller, I., Meneghesso, G., ... & Meneghini, M. (2021). Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes. Microelectronics Reliability, 126, 114255.

https://www.sciencedirect.com/science/article/pii/S0026271421002213

 

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Mukherjee, K., De Santi, C., Buffolo, M., Borga, M., You, S., Geens, K., ... & Meneghini, M. (2021). Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+ n− n diodes: the road to reliable vertical MOSFETs. Micromachines, 12(4), 445.

https://www.mdpi.com/2072-666X/12/4/445

 

Investigation of HVPE grown layers on MOVPE GaN/sapphire templates for application as drift layer in vertical GaN power devices

Xie, T., Krupinski, M., Jachalke, S., Silva, C., Großer, A., Gärtner, J., ... & Wachowiak, A. (2020, October). Investigation of HVPE grown layers on MOVPE GaN/sapphire templates for application as drift layer in vertical GaN power devices. In 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (pp. 135-138). IEEE.

https://ieeexplore.ieee.org/abstract/document/9393849

 

Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices

Diehle, P., Hübner, S., De Santi, C., Mukherjee, K., Zanoni, E., Meneghini, M., ... & Altmann, F. (2020, October). Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices. In 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (pp. 10-13). IEEE.

https://ieeexplore.ieee.org/abstract/document/9393835

 

2022

Air-filled cavity-backed 28 GHz Antenna array implemented by 2.5D PCB process and Network Analysis

Takahashi, H., Sattler, S. W., Schlaffer, E., Reitmaier, B., Sarbandifarahani, H., Paulitsch, H., & Bösch, W. (2022, April). Air-filled cavity-backed 28 GHz Antenna array implemented by 2.5 D PCB process and Network Analysis. In 2021 51st European Microwave Conference (EuMC) (pp. 534-537). IEEE.

https://ieeexplore.ieee.org/abstract/document/9784315

 

Determination of Quasi-Coaxial Via Capacitance using Conformal Mapping Technique

Takahashi, H., Peppas, I., Schlaffer, E., Paulitsch, H., & Bösch, W. (2022, May). Determination of Quasi-Coaxial Via Capacitance using Conformal Mapping Technique. In 2022 14th German Microwave Conference (GeMiC) (pp. 120-123). IEEE.

https://ieeexplore.ieee.org/abstract/document/9783518

 

Embedding of High Power RF Transistor Dies in PCB Laminate

Peppas, I., Takahashi, H., Yip, J., Schlaffer, E., Paulitsch, H., & Bösch, W. (2022, September). Embedding of High Power RF Transistor Dies in PCB Laminate. In 2022 52nd European Microwave Conference (EuMC) (pp. 444-447). IEEE.

https://ieeexplore.ieee.org/abstract/document/9924281

 

A Novel Frequency Selective Antenna for mm-Wave Phased Arrays

Farahani, H. S., Rezaee, B., Paulitsch, H., & Bösch, W. (2022, May). A Novel Frequency Selective Antenna for mm-Wave Phased Arrays. In 2022 International Workshop on Antenna Technology (iWAT) (pp. 45-48). IEEE.

https://ieeexplore.ieee.org/abstract/document/9811017

 

AlON gate dielectric and gate trench cleaning for improved reliability of vertical GaN MOSFETs

Goncalez Filho, W., Borga, M., Geens, K., Cingu, D., Chatterjee, U., You, S., ... & Homm, P. (2022, March). AlON gate dielectric and gate trench cleaning for improved reliability of vertical GaN MOSFETs. In CIPS 2022; 12th International Conference on Integrated Power Electronics Systems (pp. 1-5). VDE.

https://ieeexplore.ieee.org/abstract/document/9862012

 

Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

C. Basceri, V. Odnoblyudov, O. Aktas, W. Wohlmuth, K. Geens, A. Vohra, B. Bakeroot, H. Hahn, D. Fahle, M. Heuken, S. Decoutere, "Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform"

 

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Mukherjee, K., De Santi, C., You, S., Geens, K., Borga, M., Decoutere, S., ... & Meneghini, M. (2022). Study and characterization of GaN MOS capacitors: Planar vs trench topographies. Applied Physics Letters, 120(14), 143501.

https://aip.scitation.org/doi/full/10.1063/5.0087245

 

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

Favero, D., De Santi, C., Mukherjee, K., Geens, K., Borga, M., Bakeroot, B., ... & Meneghini, M. (2022, March). Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. P20-1). IEEE.

https://ieeexplore.ieee.org/abstract/document/9764600/

 

Laser-induced activation of Mg-doped GaN: Quantitative characterization and analysis

Nardo, A., De Santi, C., Carraro, C., Sgarbossa, F., Buffolo, M., Diehle, P., ... & Meneghini, M. (2022). Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis. Journal of Physics D: Applied Physics, 55(18), 185104.

https://iopscience.iop.org/article/10.1088/1361-6463/ac4f0c/meta

 

Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate

Wang, T., Zong, Y., Nela, L., & Matioli, E. (2022). Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate. Applied Physics Letters, 121(5), 053501.

https://aip.scitation.org/doi/abs/10.1063/5.0098052

 

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Wang, T., Zong, Y., Nela, L., & Matioli, E. (2022). Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate. IEEE Electron Device Letters, 43(9), 1523-1526.

https://ieeexplore.ieee.org/abstract/document/9825653/

 

Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs

Nela, L., Erine, C., Oropallo, M. V., & Matioli, E. (2021). Figures-of-merit of lateral GaN power devices: Modeling and comparison of HEMTs and PSJs. IEEE Journal of the Electron Devices Society, 9, 1066-1075.

https://ieeexplore.ieee.org/abstract/document/9606214/

 

Ultra-Compact Single-Stage Bidirectional Wireless Battery Charger for Electric Vehicles

Garcia-Bediaga, A., Avila, A., Zubitur, I., Sanchez, A., & Rujas, A. (2022, May). Ultra-Compact Single-Stage Bidirectional Wireless Battery Charger for Electric Vehicles. In PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 1-9). VDE.

https://ieeexplore.ieee.org/abstract/document/9862044/

 

Power Factor Corrector Control Strategies of a Bidirectional Wireless Battery Charger with an Unfolding Active Rectifier

Garcia-Bediaga, A., Avila, A., Alzuguren, I., Sanchez, A., & Rujas, A. (2022). Power Factor Corrector Control Strategies of a Bidirectional Wireless Battery Charger with an Unfolding Active Rectifier. IEEE Journal of Emerging and Selected Topics in Power Electronics.

https://ieeexplore.ieee.org/abstract/document/9749180/

 

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure

Hult, B., Thorsell, M., Chen, J. T., & Rorsman, N. (2022). High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure. IEEE Electron Device Letters, 43(5), 781-784.

https://ieeexplore.ieee.org/abstract/document/9745541/