Objectives
Objective 1:
Research on vertical power GaN processes and devices pushing performance beyond current state-of-the-art
Objective 2:
Research on lateral GaN technologies and devices to achieve best in class power density and efficiency while optimizing cost vs. performance
Objective 3:
Bringing GaN on Silicon RF performance close to GaN on Silicon Carbide thus enabling an affordable 5G rollout
Objective 4:
Breaking the packaging limits – size, electrical and thermal constraints – for high performance GaN power products
Objective 5:
Close the reliability and defect density gap for most innovative GaN devices
Objective 6:
Demonstrate European leadership in high performance power electronics and RF application domains