Scientific Publications
2019
EPFL - High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
M. Zhu, J. Ma, L. Nela, C. Erine and E. Matioli, "High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance," in IEEE Electron Device Letters, vol. 40, no. 8, pp. 1289-1292, Aug. 2019.
doi: 10.1109/LED.2019.2922204
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, D., Zhao, M., Geens, K., Li, X., Wellekens, D., Magnani, A., ... & Heuken, M. (2019). Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V.
High-performance normally-off tri-gate GaN power MOSFETs
Zhu, M., Ma, J., Nela, L., & Matioli, E. (2019, May). High-performance normally-off tri-gate GaN power MOSFETs. In 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 71-74). IEEE.
https://infoscience.epfl.ch/record/268281/files/PID5832811.pdf
1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance
Ma, J., Erine, C., Zhu, M., Luca, N., Xiang, P., Cheng, K., & Matioli, E. (2019, December). 1200 V multi-channel power devices with 2.8 Ω• mm ON-resistance. In 2019 IEEE International Electron Devices Meeting (IEDM) (pp. 4-1). IEEE.
https://infoscience.epfl.ch/record/276212/files/IEDM_infoscience.pdf
2020
Modeling of gate capacitance of GaN-based trench-gate vertical metaloxide- semiconductor devices
Borga, M., Mukherjee, K., De Santi, C., Stoffels, S., Geens, K., You, S., ... & Meneghini, M. (2020). Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. Applied Physics Express, 13(2), 024006.
https://iopscience.iop.org/article/10.35848/1882-0786/ab6ef8
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, K., Borga, M., Ruzzarin, M., De Santi, C., Stoffels, S., You, S., ... & Zanoni, E. (2020). Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs. Applied Physics Express, 13(2), 024004.
https://iopscience.iop.org/article/10.35848/1882-0786/ab6ddd/pdf
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, and Stefaan Decoutere (2020). Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS).
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.
Mukherjee, Kalparupa, et al. "Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability." Materials 13.21 (2020): 4740.
https://www.mdpi.com/1996-1944/13/21/4740
Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices
Bakeroot, B., Geens, K., Borga, M., Liang, H., You, S., & Decoutere, S. (2020, October). Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices. In 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (pp. 1-4). IEEE.
Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates
Li, X., Geens, K., Wellekens, D., Zhao, M., Magnani, A., Amirifar, N., ... & Decoutere, S. (2020). Integration of 650 V GaN power ICs on 200 mm engineered substrates. IEEE Transactions on Semiconductor Manufacturing, 33(4), 534-538.
Exploration of gate trench module for vertical GaN devices
Ruzzarin, M., Geens, K., Borga, M., Liang, H., You, S., Bakeroot, B., ... & Zanoni, E. (2020). Exploration of gate trench module for vertical GaN devices. Microelectronics Reliability, 114, 113828.
Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs
Zhu, M., Ma, J., & Matioli, E. (2020, September). Investigation of p-GaN tri-gate normally-off GaN power MOSHEMTs. In 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 345-348). IEEE.
2021
Multi-channel nanowire devices for efficient power conversion.
Nela, L., et al. "Multi-channel nanowire devices for efficient power conversion." Nature Electronics 4.4 (2021): 284-290.
Vertical GaN devices: Process and reliability
You, Shuzhen, et al. "Vertical GaN devices: Process and reliability." Microelectronics Reliability (2021): 114218.
https://www.sciencedirect.com/science/article/pii/S0026271421001840
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.
Mukherjee, Kalparupa, et al. "Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization." Materials 14.9 (2021): 2316
https://www.mdpi.com/1996-1944/14/9/2316
Comparison of the parasitic Impedances from the Drain-Source Path of Power Transistor Packages at up to 2 GHz
Moldaschl, T., Woetzel, S., Latella, R., Galvano, M., & Binder, A. (2022). Comparison of the parasitic impedances from the drain‐source path of power transistor packages at up to 2 GHz. Engineering Reports, 4(5), e12489.
https://onlinelibrary.wiley.com/doi/full/10.1002/eng2.12489
Multiphysics Reduced Order Modelling of a Packaged Laser Diode
Grosso, G., Moldaschl, T., Fuger, R., & Binder, A. (2021, September). Multiphysics Reduced Order Modelling of a Packaged Laser Diode. In 2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) (pp. 1-6). IEEE.
https://ieeexplore.ieee.org/abstract/document/9626505
A reconfigurable dual-mode Filter in Embedded Suspended Stripline Substrate Technology (ESSS)
Alterkawi, A. B. A., Sattler, S. W., Teschl, R., & Bösch, W. (2021, November). A reconfigurable dual-mode Filter in Embedded Suspended Stripline Substrate Technology (ESSS). In 2021 IEEE MTT-S International Microwave Filter Workshop (IMFW) (pp. 306-308). IEEE.
https://ieeexplore.ieee.org/abstract/document/9642296
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Geens, K., Hahn, H., Liang, H., Borga, M., Cingu, D., You, S., ... & Decoutere, S. (2021). Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication. Gen, 1000, 2.
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications
Fabris, E., Borga, M., Posthuma, N., Zhao, M., De Jaeger, B., You, S., ... & Zanoni, E. (2021, March). Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. In 2021 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-8). IEEE.
https://ieeexplore.ieee.org/abstract/document/9405097
Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si (111) interface in GaN-based HEMT buffer stacks
Mauder, C., Hahn, H., Marx, M., Gao, Z., Oligschlaeger, R., Zweipfennig, T., ... & Heuken, M. (2021). Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si (111) interface in GaN-based HEMT buffer stacks. Semiconductor Science and Technology, 36(7), 075008.
https://iopscience.iop.org/article/10.1088/1361-6641/ac02da/meta
Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations
Yoo, S. H., Lymperakis, L., & Neugebauer, J. (2021). Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations. Physical Review Materials, 5(4), 044605.
https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.5.044605
Finite-size correction for slab supercell calculations of materials with spontaneous polarization
Yoo, S. H., Todorova, M., Wickramaratne, D., Weston, L., Walle, C. G., & Neugebauer, J. (2021). Finite-size correction for slab supercell calculations of materials with spontaneous polarization. npj Computational Materials, 7(1), 1-9.
https://www.nature.com/articles/s41524-021-00529-1
Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination
Koller, C., Lymperakis, L., Pogany, D., Pobegen, G., & Ostermaier, C. (2021). Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination. Journal of Applied Physics, 130(18), 185702.
https://aip.scitation.org/doi/abs/10.1063/5.0060912
Performance evaluation of an IPT system based on GaN devices operating in capacitive, resistive or inductive regions
Avila, A., Garcia-Bediaga, A., Gonzalez-Hernando, F., Alzuguren, I., & Rujas, A. (2021, October). Performance evaluation of an IPT system based on GaN devices operating in capacitive, resistive or inductive regions. In 2021 IEEE Vehicle Power and Propulsion Conference (VPPC) (pp. 1-6). IEEE.
https://ieeexplore.ieee.org/abstract/document/9699190
An Ultra-Low Weight Bidirectional Back-End PFC Topology
Sanchez, A., Garcia-Bediaga, A., Alzuguren, I., Zubitur, I., & Rujas, A. (2021, October). An Ultra-Low Weight Bidirectional Back-End PFC Topology. In 2021 IEEE Energy Conversion Congress and Exposition (ECCE) (pp. 1224-1229). IEEE.
https://ieeexplore.ieee.org/abstract/document/9595169
High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors
Nela, L., Erine, C., Ma, J., Yildirim, H. K., Van Erp, R., Xiang, P., ... & Matioli, E. (2021, May). High-performance enhancement-mode AlGaN/GaN multi-channel power transistors. In 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 143-146). IEEE.
https://ieeexplore.ieee.org/abstract/document/9452238
Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors
Nela, L., Van Erp, R., Perera, N., Jafari, A., Erine, C., & Matioli, E. (2021). Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors. IEEE Electron Device Letters, 42(11), 1642-1645.
https://ieeexplore.ieee.org/abstract/document/9541167
LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors
Wang, T., Nikoo, M. S., Nela, L., & Matioli, E. (2021, May). LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors. In 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 135-138). IEEE.
https://ieeexplore.ieee.org/abstract/document/9452252
Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse
Nela, L., Yildirim, H. K., Erine, C., Van Erp, R., Xiang, P., Cheng, K., & Matioli, E. (2020). Conformal passivation of multi-channel GaN power transistors for reduced current collapse. IEEE Electron Device Letters, 42(1), 86-89.
https://ieeexplore.ieee.org/abstract/document/9261603
P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors
Zhu, M., Erine, C., Ma, J., Nikoo, M. S., Nela, L., Sohi, P., & Matioli, E. (2020). P-GaN tri-gate MOS structure for normally-off GaN power transistors. IEEE Electron Device Letters, 42(1), 82-85.
https://ieeexplore.ieee.org/abstract/document/9253678
Study of semi-vertical GaN-on-Si FETs by DLTFS with optical excitation
DROBNÝ, Jakub - MATUŠ, Matej - MAREK, Juraj - CHVÁLA, Aleš - GEENS, Karen - BORGA, Matteo - LIANG, Hu - YOU, Shuzhen - DECOUTERE, Stefaan - STUCHLÍKOVÁ, Ľubica,"Study of semi-vertical GaN-on-Si FETs by DLTFS with optical excitation," ADEPT 2021 : 9th International conference on advances in electronic and photonic technologies
Degradation of 600V GaN HEMTs under repetitive short circuit conditions.
Kozárik, J., Marek, J., Minárik, M., Chvála, A., Černaj, L., Donoval, M., & Donoval, D. (2020, October). Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions. In 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (pp. 127-130). IEEE.
https://ieeexplore.ieee.org/abstract/document/9393866
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., ... & Matioli, E. (2021). GaN-based power devices: Physics, reliability, and perspectives. Journal of Applied Physics, 130(18), 181101.
https://aip.scitation.org/doi/full/10.1063/5.0061354
Charge Trapping in GaN Power Transistors: Challenges and Perspectives
Meneghini, M., Modolo, N., Nardo, A., De Santi, C., Minetto, A., Sayadi, L., ... & Zanoni, E. (2021, December). Charge Trapping in GaN Power Transistors: Challenges and Perspectives. In 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (pp. 1-4). IEEE.
https://ieeexplore.ieee.org/abstract/document/9682455
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
Nardo, A., De Santi, C., Koller, C., Ostermaier, C., Daumiller, I., Meneghesso, G., ... & Meneghini, M. (2021). Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes. Microelectronics Reliability, 126, 114255.
https://www.sciencedirect.com/science/article/pii/S0026271421002213
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs
Mukherjee, K., De Santi, C., Buffolo, M., Borga, M., You, S., Geens, K., ... & Meneghini, M. (2021). Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+ n− n diodes: the road to reliable vertical MOSFETs. Micromachines, 12(4), 445.
https://www.mdpi.com/2072-666X/12/4/445
Investigation of HVPE grown layers on MOVPE GaN/sapphire templates for application as drift layer in vertical GaN power devices
Xie, T., Krupinski, M., Jachalke, S., Silva, C., Großer, A., Gärtner, J., ... & Wachowiak, A. (2020, October). Investigation of HVPE grown layers on MOVPE GaN/sapphire templates for application as drift layer in vertical GaN power devices. In 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (pp. 135-138). IEEE.
https://ieeexplore.ieee.org/abstract/document/9393849
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices
Diehle, P., Hübner, S., De Santi, C., Mukherjee, K., Zanoni, E., Meneghini, M., ... & Altmann, F. (2020, October). Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices. In 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) (pp. 10-13). IEEE.
https://ieeexplore.ieee.org/abstract/document/9393835
2022
Air-filled cavity-backed 28 GHz Antenna array implemented by 2.5D PCB process and Network Analysis
Takahashi, H., Sattler, S. W., Schlaffer, E., Reitmaier, B., Sarbandifarahani, H., Paulitsch, H., & Bösch, W. (2022, April). Air-filled cavity-backed 28 GHz Antenna array implemented by 2.5 D PCB process and Network Analysis. In 2021 51st European Microwave Conference (EuMC) (pp. 534-537). IEEE.
https://ieeexplore.ieee.org/abstract/document/9784315
Determination of Quasi-Coaxial Via Capacitance using Conformal Mapping Technique
Takahashi, H., Peppas, I., Schlaffer, E., Paulitsch, H., & Bösch, W. (2022, May). Determination of Quasi-Coaxial Via Capacitance using Conformal Mapping Technique. In 2022 14th German Microwave Conference (GeMiC) (pp. 120-123). IEEE.
https://ieeexplore.ieee.org/abstract/document/9783518
Embedding of High Power RF Transistor Dies in PCB Laminate
Peppas, I., Takahashi, H., Yip, J., Schlaffer, E., Paulitsch, H., & Bösch, W. (2022, September). Embedding of High Power RF Transistor Dies in PCB Laminate. In 2022 52nd European Microwave Conference (EuMC) (pp. 444-447). IEEE.
https://ieeexplore.ieee.org/abstract/document/9924281
A Novel Frequency Selective Antenna for mm-Wave Phased Arrays
Farahani, H. S., Rezaee, B., Paulitsch, H., & Bösch, W. (2022, May). A Novel Frequency Selective Antenna for mm-Wave Phased Arrays. In 2022 International Workshop on Antenna Technology (iWAT) (pp. 45-48). IEEE.
https://ieeexplore.ieee.org/abstract/document/9811017
AlON gate dielectric and gate trench cleaning for improved reliability of vertical GaN MOSFETs
Goncalez Filho, W., Borga, M., Geens, K., Cingu, D., Chatterjee, U., You, S., ... & Homm, P. (2022, March). AlON gate dielectric and gate trench cleaning for improved reliability of vertical GaN MOSFETs. In CIPS 2022; 12th International Conference on Integrated Power Electronics Systems (pp. 1-5). VDE.
https://ieeexplore.ieee.org/abstract/document/9862012
Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
C. Basceri, V. Odnoblyudov, O. Aktas, W. Wohlmuth, K. Geens, A. Vohra, B. Bakeroot, H. Hahn, D. Fahle, M. Heuken, S. Decoutere, "Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform"
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
Mukherjee, K., De Santi, C., You, S., Geens, K., Borga, M., Decoutere, S., ... & Meneghini, M. (2022). Study and characterization of GaN MOS capacitors: Planar vs trench topographies. Applied Physics Letters, 120(14), 143501.
https://aip.scitation.org/doi/full/10.1063/5.0087245
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
Favero, D., De Santi, C., Mukherjee, K., Geens, K., Borga, M., Bakeroot, B., ... & Meneghini, M. (2022, March). Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. P20-1). IEEE.
https://ieeexplore.ieee.org/abstract/document/9764600/
Laser-induced activation of Mg-doped GaN: Quantitative characterization and analysis
Nardo, A., De Santi, C., Carraro, C., Sgarbossa, F., Buffolo, M., Diehle, P., ... & Meneghini, M. (2022). Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis. Journal of Physics D: Applied Physics, 55(18), 185104.
https://iopscience.iop.org/article/10.1088/1361-6463/ac4f0c/meta
Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate
Wang, T., Zong, Y., Nela, L., & Matioli, E. (2022). Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate. Applied Physics Letters, 121(5), 053501.
https://aip.scitation.org/doi/abs/10.1063/5.0098052
Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate
Wang, T., Zong, Y., Nela, L., & Matioli, E. (2022). Enhancement-Mode Multi-Channel AlGaN/GaN Transistors With LiNiO Junction Tri-Gate. IEEE Electron Device Letters, 43(9), 1523-1526.
https://ieeexplore.ieee.org/abstract/document/9825653/
Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs
Nela, L., Erine, C., Oropallo, M. V., & Matioli, E. (2021). Figures-of-merit of lateral GaN power devices: Modeling and comparison of HEMTs and PSJs. IEEE Journal of the Electron Devices Society, 9, 1066-1075.
https://ieeexplore.ieee.org/abstract/document/9606214/
Ultra-Compact Single-Stage Bidirectional Wireless Battery Charger for Electric Vehicles
Garcia-Bediaga, A., Avila, A., Zubitur, I., Sanchez, A., & Rujas, A. (2022, May). Ultra-Compact Single-Stage Bidirectional Wireless Battery Charger for Electric Vehicles. In PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 1-9). VDE.
https://ieeexplore.ieee.org/abstract/document/9862044/
Power Factor Corrector Control Strategies of a Bidirectional Wireless Battery Charger with an Unfolding Active Rectifier
Garcia-Bediaga, A., Avila, A., Alzuguren, I., Sanchez, A., & Rujas, A. (2022). Power Factor Corrector Control Strategies of a Bidirectional Wireless Battery Charger with an Unfolding Active Rectifier. IEEE Journal of Emerging and Selected Topics in Power Electronics.
https://ieeexplore.ieee.org/abstract/document/9749180/
High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure
Hult, B., Thorsell, M., Chen, J. T., & Rorsman, N. (2022). High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure. IEEE Electron Device Letters, 43(5), 781-784.
https://ieeexplore.ieee.org/abstract/document/9745541/